NPN PHOTOTRANSISTOR; PN INFRARED EMITTING DIODE; GALLIUM ARSENIDE LED; SILICON PHOTO DARLINGTON TRANSISTOR; 250 MW; 80 MA; 30 VOLTS; MINUS 55 DEG C TO PLUS 100 DEG C OPERATING JUNCTION TEMPERATURE RANGE; 6 TERMINALS; 0.350 IN. LG; 0.300 IN.
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SPECIFICATION/STANDARD DATA
80131-RELEASE 6464 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
Relevant Components for NSN - 5980-01-205-7293, 5980012057293
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